Tyndall National Institute 2010

BIANCHO: BIsmide And Nitride Components for High temperature Operation
BIANCHO is a collaborative project funded under the EU 7th Research Framework

NEWS: Compound Semiconductor Magazine published a Feature Article and associated editorial on BIANCHO project: Digital copy of CS Magazine here
"An Elemental Change to Laser Design", Compound Semiconductor - Page 53, Volume 19, Number 6, August/September 2013 (Editorial on page 3) -
PDF copy of CS Magazine August/September Issue here

NEWS: The 5th International Workshop on Bismuth-Containing Semiconductors: Growth, Properties and Devices took place in Cork, Ireland on 20-23 July 2014. Further details are posted here.

NEWS: The BIANCHO project and 5th International Workshop were featured in July 2014 in EE Times.

NEWS: The BIANCHO project was featured in the Financial Times magazine - see second article here.


World's First Electrically-Pumped Bismide Laser

The BIANCHO team has demonstrated the world's first electrically-pumped dilute bismide lasers, grown using MOVPE.

The results are reported in Applied Physics Letters.

BIANCHO Vision & Aim

The ultimate goal of the BIANCHO team is to realize high quality bismuth-based photonic devices with Bi > 10%, leading to a 50% saving of the power demand in a fibre-to-the-home (FTTH) system due to suppression of Auger losses. Assuming a steady rollout of FTTH over Europe in the years to come, power savings thanks to BIANCHO technology should reach about 3500GWh/year.

Towards this goal, key results that have been achieved are:

(1) The energy gap (Eg) of GaBiAs alloy has been shown to rapidly decrease with Bi fraction, leading to Eg < 0.8 eV for Bi > 10%.

(2) Based on photo-reflectance measurements and atomistic theoretical calculations, the spin-orbit-splitting energy has been found to exceed the energy gap (Eg) for GaBiAs alloy with Bi > 10%. This condition is critical for suppression of CHSH Auger losses.

(3)Type-I band offset is established for GaBiAs alloy, grown on GaAs substrate.

(4) By carefully analysing MOVPE growth conditions, a high quality GaBiAs single quantum well laser has been achieved with 2.2% Bi fraction.

Further details of the science and technology behind BIANCHO can be found Here.

For further information please contact Eoin O'Reilly
BIANCHO is fully funded by the EU